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IRFR3711TR from IOR,International Rectifier

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IRFR3711TR

Manufacturer: IOR

20V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRFR3711TR IOR 1400 In Stock

Description and Introduction

20V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRFR3711TR is a Power MOSFET manufactured by Infineon Technologies. Below are the factual details about its specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 40V  
- **Continuous Drain Current (ID):** 62A  
- **Pulsed Drain Current (IDM):** 250A  
- **Power Dissipation (PD):** 140W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 8.5mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Total Gate Charge (Qg):** 100nC (typical)  
- **Input Capacitance (Ciss):** 4500pF (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Descriptions:**  
- **Package:** TO-252 (DPAK)  
- **Mounting Type:** Surface Mount  
- **Technology:** HEXFET Power MOSFET  
- **Polarity:** N-Channel  

### **Features:**  
- Low on-resistance for high efficiency  
- Fast switching performance  
- High current handling capability  
- Avalanche energy specified  
- Lead-free and RoHS compliant  

This information is sourced from the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Partnumber Manufacturer Quantity Availability
IRFR3711TR IR 5449 In Stock

Description and Introduction

20V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRFR3711TR is a power MOSFET manufactured by International Rectifier (IR). Here are its key specifications, descriptions, and features:  

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDS):** 20V  
- **Continuous Drain Current (ID):** 62A  
- **Pulsed Drain Current (IDM):** 250A  
- **RDS(on) (Max) @ VGS = 10V:** 5.5mΩ  
- **RDS(on) (Max) @ VGS = 4.5V:** 7.5mΩ  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 110W  
- **Operating Temperature Range:** -55°C to +175°C  
- **Package:** D2PAK (TO-263)  

### **Descriptions & Features:**  
- **Low On-Resistance:** Optimized for high-efficiency power switching applications.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **Avalanche Energy Rated:** Enhances ruggedness in inductive load switching.  
- **Fully Characterized for Linear Mode Operation:** Ensures stable performance.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  
- **Applications:** Used in DC-DC converters, motor control, power management, and battery protection circuits.  

This information is based solely on the manufacturer's datasheet.

Application Scenarios & Design Considerations

20V Single N-Channel HEXFET Power MOSFET in a D-Pak package

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