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IRFR3709ZPBF from IR,International Rectifier

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IRFR3709ZPBF

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRFR3709ZPBF IR 25000 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRFR3709ZPBF is a power MOSFET manufactured by Infineon Technologies (formerly International Rectifier). Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies (formerly International Rectifier, IR)  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 62A (at 25°C)  
- **Pulsed Drain Current (IDM):** 250A  
- **RDS(on) (Max):** 4.5mΩ (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 79W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-252 (DPAK)  

### **Descriptions & Features:**  
- **Advanced Process Technology:** Optimized for low RDS(on) and high current handling.  
- **Fast Switching Performance:** Suitable for high-efficiency power applications.  
- **Avalanche Energy Specified:** Enhances ruggedness in inductive load switching.  
- **Fully Characterized for Linear Mode Operation:** Ensures reliable performance in linear applications.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This MOSFET is commonly used in power management, DC-DC converters, motor control, and other high-current switching applications.

Application Scenarios & Design Considerations

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

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