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IRFR3708TRRPBF from IR,International Rectifier

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IRFR3708TRRPBF

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRFR3708TRRPBF IR 10000 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRFR3708TRRPBF is a power MOSFET manufactured by Infineon Technologies. Here are its key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDS):** 75V  
- **Continuous Drain Current (ID):** 130A  
- **Pulsed Drain Current (IDM):** 520A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 3.7mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V (min), 4V (max)  
- **Input Capacitance (Ciss):** 3800pF  
- **Output Capacitance (Coss):** 1000pF  
- **Reverse Transfer Capacitance (Crss):** 200pF  
- **Operating Temperature Range:** -55°C to +175°C  

### **Descriptions & Features:**  
- **Technology:** Advanced HEXFET® Power MOSFET  
- **Package:** TO-252 (DPAK)  
- **Low On-Resistance:** Optimized for high-efficiency power switching  
- **Fast Switching Speed:** Suitable for high-frequency applications  
- **Avalanche Energy Rated:** Robust performance under inductive loads  
- **Lead-Free & RoHS Compliant:** Meets environmental standards  
- **Applications:** Power supplies, motor control, DC-DC converters, and battery management systems  

This MOSFET is designed for high-current, low-voltage applications requiring efficient power handling.

Application Scenarios & Design Considerations

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

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