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IRFR3707ZTRPBF from IOR,International Rectifier

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IRFR3707ZTRPBF

Manufacturer: IOR, IR

HEXFETPower MOSFET
Partnumber Manufacturer Quantity Availability
IRFR3707ZTRPBF IOR, IR 67900 In Stock

Description and Introduction

HEXFETPower MOSFET The IRFR3707ZTRPBF is a power MOSFET manufactured by Infineon Technologies (formerly International Rectifier, IR). Here are its key specifications, descriptions, and features:

### **Specifications:**
- **Manufacturer:** Infineon Technologies (IR)  
- **Part Number:** IRFR3707ZTRPBF  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 75V  
- **Continuous Drain Current (ID):** 62A  
- **Pulsed Drain Current (IDM):** 250A  
- **RDS(on) (Max):** 6.5 mΩ @ VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 110W  
- **Operating Temperature Range:** -55°C to +175°C  
- **Package:** TO-252 (DPAK)  

### **Descriptions and Features:**
- **Advanced HEXFET® Technology:** Provides low on-resistance and high efficiency.  
- **Fast Switching:** Optimized for high-speed switching applications.  
- **Low Gate Charge:** Reduces switching losses.  
- **Avalanche Energy Rated:** Enhances ruggedness in inductive load applications.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  
- **Applications:** Used in power supplies, motor control, DC-DC converters, and other high-current switching circuits.  

This MOSFET is designed for high-performance power management in various industrial and automotive applications.

Application Scenarios & Design Considerations

HEXFETPower MOSFET

Alternative Part Number

  • FDD8878 --: N-channel MOSFET in DPAK with comparable 30V rating and low RDS(on), suitable drop-in replacement for switching applications.
  • STD95N3LLH6 --: 30V N-channel MOSFET in DPAK with low on-resistance and similar current capability, good alternative for power switching.
  • AOD442 --: 30V N-channel MOSFET in DPAK with low RDS(on) and comparable gate charge, usable as a functional substitute.
  • SI4410BDY --: 30V N-channel MOSFET in SO-8 with similar current and RDS(on) characteristics, good alternative when package flexibility is acceptable.
  • BSC0902NS --: 30V N-channel MOSFET with low on-resistance and high current capability, suitable for power switching where thermal performance is adequate.

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