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IRFR3707Z. from IR,International Rectifier

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IRFR3707Z.

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRFR3707Z.,IRFR3707Z IR 15 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRFR3707Z is a power MOSFET manufactured by International Rectifier (IR). Below are its specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Manufacturer:** International Rectifier (IR)  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 75V  
- **Continuous Drain Current (ID):** 62A (at 25°C)  
- **Pulsed Drain Current (IDM):** 250A  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):**  
  - 7.5mΩ (max) at VGS = 10V  
  - 9.5mΩ (max) at VGS = 4.5V  
- **Power Dissipation (PD):** 140W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-220AB  

### **Descriptions and Features:**  
- **Advanced HEXFET® Technology:** Provides low on-resistance and high switching performance.  
- **Fast Switching:** Optimized for high-efficiency power conversion applications.  
- **Avalanche Energy Specified:** Ensures ruggedness under inductive load conditions.  
- **Fully Characterized:** Guaranteed performance across the full operating temperature range.  
- **Lead-Free and RoHS Compliant:** Meets environmental standards.  

This MOSFET is commonly used in power management, motor control, DC-DC converters, and other high-current switching applications.  

(Note: Always refer to the latest datasheet for precise details before use.)

Application Scenarios & Design Considerations

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

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