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IRFR3706 from IR,International Rectifier

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IRFR3706

Manufacturer: IR

20V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRFR3706 IR 2500 In Stock

Description and Introduction

20V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRFR3706 is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features based on the manufacturer's data:

### **Manufacturer:** International Rectifier (IR)  
### **Part Number:** IRFR3706  

### **Key Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 140A (at 25°C)  
- **Pulsed Drain Current (IDM):** 560A  
- **RDS(on) (Max):** 4.5mΩ (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 300W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-252 (DPAK)  

### **Description:**  
The IRFR3706 is a high-performance N-channel MOSFET designed for power switching applications. It features low on-resistance (RDS(on)) and high current capability, making it suitable for high-efficiency power conversion.  

### **Features:**  
- Low RDS(on) for reduced conduction losses  
- High current handling capability  
- Fast switching performance  
- Avalanche energy specified  
- Lead-free and RoHS compliant  

For detailed datasheet information, refer to the manufacturer's official documentation.

Application Scenarios & Design Considerations

20V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Alternative Part Number

  • FDD8878 --: N-channel MOSFET in TO-252 (DPAK) with comparable 30V/40A class ratings and low RDS(on), a common drop-in replacement for IRFR3706 in switching applications.
  • STD95N3LLH6 --: N-channel power MOSFET in DPAK with similar voltage and current capability and low on-resistance, suitable for the same power switching and load control circuits.
  • BUK9219-55A --: Logic-level N-channel MOSFET in DPAK with comparable current rating and low RDS(on), usable as an alternative where gate drive and thermal conditions are similar.

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