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IRFR3704TRL from IR,International Rectifier

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IRFR3704TRL

Manufacturer: IR

20V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRFR3704TRL IR 5098 In Stock

Description and Introduction

20V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRFR3704TRL is a power MOSFET manufactured by Infineon Technologies. Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 40V  
- **Continuous Drain Current (ID):** 74A (at 25°C)  
- **Pulsed Drain Current (IDM):** 296A  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 5.3mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V (min), 4V (max)  
- **Input Capacitance (Ciss):** 4800pF (typical)  
- **Output Capacitance (Coss):** 1400pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 300pF (typical)  
- **Turn-On Delay Time (td(on)):** 18ns (typical)  
- **Rise Time (tr):** 45ns (typical)  
- **Turn-Off Delay Time (td(off)):** 60ns (typical)  
- **Fall Time (tf):** 25ns (typical)  
- **Operating Temperature Range:** -55°C to +175°C  
- **Package:** TO-252 (DPAK)  

### **Descriptions and Features:**  
- **Technology:** Advanced HEXFET® Power MOSFET  
- **Application:** Designed for high-efficiency switching applications  
- **Low On-Resistance:** Minimizes conduction losses  
- **Fast Switching:** Optimized for high-frequency operation  
- **Avalanche Energy Rated:** Robust performance under inductive loads  
- **Lead-Free & RoHS Compliant:** Meets environmental standards  

This information is based on the manufacturer's datasheet and specifications.

Application Scenarios & Design Considerations

20V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Alternative Part Number

  • FDP8870 --: N-channel MOSFET in TO-220/DPAK-class family with comparable 30V-class ratings and low RDS(on), suitable as a drop-in replacement for switching applications.
  • STD95N3LLH6 --: Low-voltage N-channel power MOSFET with similar current and on-resistance characteristics, usable in the same DPAK footprint for power switching.
  • BUK961R6-40E --: Logic-level N-channel MOSFET with comparable voltage and low RDS(on), offering a different series naming and suitable for similar load-switching designs.

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