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IRFR3607PBF from IR,International Rectifier

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IRFR3607PBF

Manufacturer: IR

75V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRFR3607PBF IR 30000 In Stock

Description and Introduction

75V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRFR3607PBF is a Power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:**  
- **Infineon Technologies**  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 60V  
- **Continuous Drain Current (ID):** 23A  
- **Pulsed Drain Current (IDM):** 92A  
- **RDS(on) (Max) @ VGS = 10V:** 0.027Ω  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 42W  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-252 (DPAK)  

### **Descriptions:**  
- **Type:** N-Channel Power MOSFET  
- **Technology:** HEXFET® (High-Efficiency MOSFET)  
- **Application:** Designed for high-efficiency switching applications  

### **Features:**  
- **Low On-Resistance (RDS(on)):** Enhances efficiency in power applications  
- **Fast Switching Speed:** Optimized for high-frequency switching  
- **Avalanche Energy Specified:** Ensures ruggedness in inductive load conditions  
- **Lead-Free & RoHS Compliant:** Meets environmental standards  

This information is based solely on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

75V Single N-Channel HEXFET Power MOSFET in a D-Pak package

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