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IRFR224TR from IR,International Rectifier

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IRFR224TR

Manufacturer: IR

250V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRFR224TR IR 3000 In Stock

Description and Introduction

250V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRFR224TR is a Power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Description:**  
The IRFR224TR is an N-channel HEXFET Power MOSFET designed for high-efficiency switching applications. It is optimized for low gate drive power and fast switching speeds.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 60V  
- **Continuous Drain Current (ID):** 11A  
- **Pulsed Drain Current (IDM):** 44A  
- **Power Dissipation (PD):** 38W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.065Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 630pF  
- **Output Capacitance (Coss):** 190pF  
- **Reverse Transfer Capacitance (Crss):** 50pF  
- **Turn-On Delay Time (td(on)):** 10ns  
- **Rise Time (tr):** 35ns  
- **Turn-Off Delay Time (td(off)):** 40ns  
- **Fall Time (tf):** 20ns  

### **Features:**  
- Low on-resistance for reduced conduction losses  
- Fast switching speed for improved efficiency  
- High current handling capability  
- Avalanche energy specified for ruggedness  
- Lead-free and RoHS compliant  
- TO-252 (DPAK) package for surface-mount applications  

This MOSFET is commonly used in power supplies, motor control, DC-DC converters, and other high-efficiency switching applications.

Application Scenarios & Design Considerations

250V Single N-Channel HEXFET Power MOSFET in a D-Pak package

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