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IRFR214TRPBF from IR,International Rectifier

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IRFR214TRPBF

Manufacturer: IR

Power MOSFET

Partnumber Manufacturer Quantity Availability
IRFR214TRPBF IR 6000 In Stock

Description and Introduction

Power MOSFET The IRFR214TRPBF is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** Infineon Technologies  
- **Part Number:** IRFR214TRPBF  
- **Type:** N-Channel Power MOSFET  
- **Package:** TO-252 (DPAK)  
- **Drain-Source Voltage (VDS):** 60V  
- **Continuous Drain Current (ID):** 14A  
- **Pulsed Drain Current (IDM):** 56A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 42W  
- **On-Resistance (RDS(on)):** 0.065Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Total Gate Charge (Qg):** 16nC (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Descriptions:**  
- The IRFR214TRPBF is a high-performance N-Channel MOSFET designed for power switching applications.  
- It is optimized for low on-resistance and fast switching speeds, making it suitable for DC-DC converters, motor control, and power management circuits.  
- The TO-252 (DPAK) package provides efficient thermal performance for surface-mount applications.  

### **Features:**  
- **Low On-Resistance:** Ensures minimal conduction losses.  
- **Fast Switching:** Enhances efficiency in high-frequency applications.  
- **Avalanche Energy Rated:** Provides robustness in inductive load conditions.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This information is strictly based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

Power MOSFET

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