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IRFR214 from 仙童/IR,Fairchild Semiconductor

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IRFR214

Manufacturer: 仙童/IR

250V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRFR214 仙童/IR 6890 In Stock

Description and Introduction

250V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRFR214 is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are its key specifications, descriptions, and features:  

### **Specifications:**  
- **Manufacturer:** Fairchild/IR (International Rectifier)  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 5.7A  
- **Pulsed Drain Current (IDM):** 23A  
- **Power Dissipation (PD):** 42W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.18Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V (min), 4V (max)  
- **Input Capacitance (Ciss):** 300pF (typ)  
- **Output Capacitance (Coss):** 60pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 30pF (typ)  
- **Switching Speed:** Fast switching due to low gate charge  
- **Package:** TO-252 (DPAK)  

### **Descriptions and Features:**  
- Designed for high-efficiency power switching applications.  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- Suitable for DC-DC converters, motor control, and power management circuits.  
- Fast switching performance enhances efficiency in high-frequency applications.  
- Avalanche energy rated for ruggedness in inductive load conditions.  
- Lead-free and RoHS compliant.  

For detailed datasheet information, refer to the official documentation from Fairchild/ON Semiconductor.

Application Scenarios & Design Considerations

250V Single N-Channel HEXFET Power MOSFET in a D-Pak package

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