N-CHANNEL POWER MOSFET The IRFR120A is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** FAIRCHILD (now part of ON Semiconductor)
- **Type:** N-Channel Power MOSFET
- **Drain-Source Voltage (VDSS):** 100V
- **Continuous Drain Current (ID):** 8.7A
- **Pulsed Drain Current (IDM):** 34A
- **Power Dissipation (PD):** 42W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 0.27Ω (at VGS = 10V)
- **Threshold Voltage (VGS(th)):** 2V to 4V
- **Input Capacitance (Ciss):** 450pF
- **Output Capacitance (Coss):** 110pF
- **Reverse Transfer Capacitance (Crss):** 50pF
- **Turn-On Delay Time (td(on)):** 10ns
- **Turn-Off Delay Time (td(off)):** 35ns
- **Operating Temperature Range:** -55°C to 175°C
- **Package:** TO-252 (DPAK)
### **Descriptions:**
- The IRFR120A is a high-voltage N-Channel MOSFET designed for switching applications.
- It is optimized for low on-resistance and fast switching performance.
- Suitable for power management in DC-DC converters, motor control, and other high-efficiency applications.
### **Features:**
- **Low On-Resistance:** Ensures minimal power loss.
- **Fast Switching:** Enhances efficiency in high-frequency applications.
- **Avalanche Energy Specified:** Improves reliability in inductive load switching.
- **Improved dv/dt Capability:** Reduces susceptibility to voltage spikes.
- **Lead-Free & RoHS Compliant:** Meets environmental standards.
This information is based on the manufacturer's datasheet and technical documentation.
