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IRFPE40PBF from VISHAY

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IRFPE40PBF

Manufacturer: VISHAY

800V Single N-Channel HEXFET Power MOSFET in a TO-247AC package

Partnumber Manufacturer Quantity Availability
IRFPE40PBF VISHAY 12000 In Stock

Description and Introduction

800V Single N-Channel HEXFET Power MOSFET in a TO-247AC package The IRFPE40PBF is a Power MOSFET manufactured by Vishay. Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Manufacturer:** Vishay  
- **Part Number:** IRFPE40PBF  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 500V  
- **Continuous Drain Current (ID):** 4.3A @ 25°C  
- **Pulsed Drain Current (IDM):** 17A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 125W @ 25°C  
- **RDS(on) (Drain-Source On-Resistance):** 1.5Ω @ VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 450pF  
- **Output Capacitance (Coss):** 100pF  
- **Reverse Transfer Capacitance (Crss):** 20pF  
- **Turn-On Delay Time (td(on)):** 15ns  
- **Turn-Off Delay Time (td(off)):** 60ns  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** TO-247AC  

### **Descriptions:**
- The IRFPE40PBF is a high-voltage N-Channel MOSFET designed for power switching applications.  
- It features low gate charge and fast switching speeds, making it suitable for high-efficiency power conversion.  
- The device is optimized for applications such as motor drives, power supplies, and inverters.  

### **Features:**
- **High Voltage Capability (500V)**  
- **Low On-Resistance**  
- **Fast Switching Speed**  
- **Improved dv/dt Capability**  
- **Avalanche Energy Specified**  
- **TO-247AC Package for High Power Dissipation**  

This information is based on Vishay's datasheet for the IRFPE40PBF.

Application Scenarios & Design Considerations

800V Single N-Channel HEXFET Power MOSFET in a TO-247AC package

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