HEXFET Power MOSFET The IRFP27N60KPBF is a power MOSFET manufactured by Vishay. Below are its key specifications, descriptions, and features:
### **Specifications:**
- **Manufacturer:** Vishay
- **Part Number:** IRFP27N60KPBF
- **Transistor Type:** N-Channel MOSFET
- **Technology:** HEXFET® Power MOSFET
- **Drain-Source Voltage (VDSS):** 600V
- **Continuous Drain Current (ID):** 27A (at 25°C)
- **Pulsed Drain Current (IDM):** 108A
- **Power Dissipation (PD):** 330W (at 25°C)
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 0.19Ω (max) at VGS = 10V
- **Total Gate Charge (Qg):** 120nC (typical)
- **Input Capacitance (Ciss):** 3800pF (typical)
- **Output Capacitance (Coss):** 600pF (typical)
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)
- **Turn-On Delay Time (td(on)):** 15ns (typical)
- **Rise Time (tr):** 60ns (typical)
- **Turn-Off Delay Time (td(off)):** 60ns (typical)
- **Fall Time (tf):** 30ns (typical)
- **Operating Junction Temperature (TJ):** -55°C to +150°C
- **Package:** TO-247AC
### **Descriptions:**
- The IRFP27N60KPBF is a high-voltage N-Channel MOSFET designed for power switching applications.
- It features low on-resistance and fast switching speeds, making it suitable for high-efficiency power conversion.
- The device is part of Vishay’s HEXFET® series, known for high performance and reliability.
### **Features:**
- **High Voltage Rating (600V)**
- **Low On-Resistance (RDS(on))**
- **Fast Switching Performance**
- **Avalanche Energy Specified**
- **Improved dv/dt Capability**
- **Low Gate Charge**
- **Lead-Free and RoHS Compliant**
This MOSFET is commonly used in power supplies, motor control, inverters, and other high-voltage switching applications.
