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IRFL110 from IOR,International Rectifier

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IRFL110

Manufacturer: IOR

100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package

Partnumber Manufacturer Quantity Availability
IRFL110 IOR 750 In Stock

Description and Introduction

100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package The IRFL110 is a power MOSFET manufactured by International Rectifier (IOR).  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 100V  
- **Continuous Drain Current (ID):** 1.1A  
- **Pulsed Drain Current (IDM):** 4.4A  
- **Power Dissipation (PD):** 20W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 3.0Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2.0V (min) – 4.0V (max)  
- **Input Capacitance (Ciss):** 30pF (typical)  
- **Package:** TO-251 (DPAK)  

### **Descriptions and Features:**  
- N-channel enhancement mode MOSFET  
- Designed for high-speed switching applications  
- Low gate charge for improved efficiency  
- Suitable for power management, DC-DC converters, and motor control  
- Avalanche energy rated for ruggedness  

This information is based on the manufacturer's datasheet. For exact performance characteristics, refer to the official documentation.

Application Scenarios & Design Considerations

100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package

Alternative Part Number

  • STD12NF06L --: N-channel MOSFET in TO-252 (DPAK) with comparable voltage and current ratings, widely available and pin-compatible for most IRFL110 applications.
  • FQD12N10 --: 100V N-channel MOSFET in DPAK package offering similar on-resistance and current handling, suitable drop-in replacement for switching and load-control circuits.
  • BUK7275-100A --: 100V logic-level N-channel MOSFET in DPAK with low RDS(on), providing good electrical similarity and thermal performance for the IRFL110 role.

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