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IRFH7911TRPBF from IR,International Rectifier

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IRFH7911TRPBF

Manufacturer: IR

30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package

Partnumber Manufacturer Quantity Availability
IRFH7911TRPBF IR 1958 In Stock

Description and Introduction

30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package The IRFH7911TRPBF is a power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Part Number:**  
IRFH7911TRPBF  

### **Type:**  
N-Channel Power MOSFET  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 195A  
- **Pulsed Drain Current (IDM):** 390A  
- **RDS(ON) (Max):** 1.0 mΩ @ VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 250W  
- **Operating Temperature Range:** -55°C to +175°C  

### **Package:**  
PQFN 5x6mm  

### **Features:**  
- Optimized for high-efficiency synchronous buck converters  
- Ultra-low on-resistance (RDS(ON))  
- Low gate charge (Qg) for fast switching  
- High current handling capability  
- Lead-free and RoHS compliant  

### **Applications:**  
- DC-DC converters  
- Power management in servers, telecom, and industrial applications  
- High-frequency switching power supplies  

This information is based on the manufacturer's datasheet and technical documentation.

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