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IRFD9120PBF from VISHAY

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7.813ms

IRFD9120PBF

Manufacturer: VISHAY

Power MOSFET

Partnumber Manufacturer Quantity Availability
IRFD9120PBF VISHAY 12000 In Stock

Description and Introduction

Power MOSFET The IRFD9120PBF is a P-channel HEXFET Power MOSFET manufactured by Vishay. Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Drain-Source Voltage (VDSS):** -100V  
- **Continuous Drain Current (ID):** -3.1A (at 25°C)  
- **Pulsed Drain Current (IDM):** -12A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 36W (at 25°C)  
- **On-Resistance (RDS(on)):** 0.5Ω (max) at VGS = -10V  
- **Threshold Voltage (VGS(th)):** -2V to -4V  
- **Input Capacitance (Ciss):** 240pF  
- **Output Capacitance (Coss):** 90pF  
- **Reverse Transfer Capacitance (Crss):** 35pF  
- **Operating Temperature Range:** -55°C to +150°C  

### **Description:**
The IRFD9120PBF is a high-performance P-channel MOSFET designed for power switching applications. It features low on-resistance and fast switching speeds, making it suitable for DC-DC converters, motor control, and power management circuits.

### **Features:**
- **Low On-Resistance (RDS(on))** for efficient power handling.  
- **Fast Switching Speed** for improved performance in high-frequency applications.  
- **High Input Impedance** for easy drive compatibility.  
- **Avalanche Energy Specified** for ruggedness in inductive load switching.  
- **TO-252 (DPAK) Package** for surface-mount applications.  

This MOSFET is commonly used in power supplies, inverters, and automotive applications where reliable switching performance is required.

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