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IRFBC40PBF from VISHAY

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IRFBC40PBF

Manufacturer: VISHAY

600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRFBC40PBF VISHAY 12000 In Stock

Description and Introduction

600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRFBC40PBF is a power MOSFET manufactured by Vishay. Below are its key specifications, descriptions, and features:

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** IRFBC40PBF  
- **Transistor Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 600V  
- **Continuous Drain Current (ID):** 6.2A (at 25°C)  
- **Pulsed Drain Current (IDM):** 24A  
- **Gate-Source Voltage (VGS):** ±30V  
- **Power Dissipation (PD):** 125W (at 25°C)  
- **On-Resistance (RDS(on)):** 1.2Ω (max) at VGS = 10V  
- **Input Capacitance (Ciss):** 480pF (typical)  
- **Output Capacitance (Coss):** 90pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 35pF (typical)  
- **Turn-On Delay Time (td(on)):** 15ns (typical)  
- **Turn-Off Delay Time (td(off)):** 60ns (typical)  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** TO-220AB  

### **Descriptions:**  
- The IRFBC40PBF is a high-voltage N-Channel MOSFET designed for switching applications.  
- It is suitable for power supplies, motor control, and other high-voltage circuits.  
- The TO-220AB package provides efficient thermal performance.  

### **Features:**  
- **High Voltage Capability (600V)**  
- **Low Gate Charge (Qg)**  
- **Fast Switching Speed**  
- **Avalanche Energy Specified**  
- **Improved dv/dt Capability**  
- **Low On-Resistance**  
- **Lead-Free and RoHS Compliant**  

This information is based on Vishay's datasheet for the IRFBC40PBF.

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