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IRFBC40AS from IR,International Rectifier

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IRFBC40AS

Manufacturer: IR

600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRFBC40AS IR 1120 In Stock

Description and Introduction

600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRFBC40AS is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:** International Rectifier (IR)  
### **Part Number:** IRFBC40AS  
### **Type:** N-Channel Power MOSFET  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 600V  
- **Continuous Drain Current (ID):** 4.3A (at 25°C)  
- **Pulsed Drain Current (IDM):** 17A  
- **Power Dissipation (PD):** 38W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 1.5Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2-4V  
- **Input Capacitance (Ciss):** 300pF (typical)  
- **Output Capacitance (Coss):** 50pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 10pF (typical)  
- **Turn-On Delay Time (td(on)):** 15ns (typical)  
- **Turn-Off Delay Time (td(off)):** 50ns (typical)  
- **Rise Time (tr):** 35ns (typical)  
- **Fall Time (tf):** 20ns (typical)  

### **Package:**  
- **TO-220AB** (Through-Hole)  

### **Features:**  
- **Fast Switching:** Optimized for high-speed switching applications.  
- **Low Gate Charge:** Reduces switching losses.  
- **Avalanche Energy Rated:** Enhances ruggedness in inductive load applications.  
- **Low On-Resistance:** Improves efficiency in power conversion.  
- **Planar Technology:** Provides stable performance and reliability.  

### **Applications:**  
- Switching power supplies  
- Motor control  
- DC-DC converters  
- Inverters  
- Electronic ballasts  

This information is based on the manufacturer's datasheet for the IRFBC40AS.

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