150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRFB52N15DPBF is a power MOSFET manufactured by Infineon Technologies (formerly International Rectifier). Below are the factual specifications, descriptions, and features from the manufacturer's datasheet:
### **Specifications:**
- **Manufacturer:** Infineon Technologies (IR)
- **Part Number:** IRFB52N15DPBF
- **Type:** N-Channel Power MOSFET
- **Technology:** HEXFET®
- **Drain-Source Voltage (VDSS):** 150V
- **Continuous Drain Current (ID):** 52A (at 25°C)
- **Pulsed Drain Current (IDM):** 208A
- **Power Dissipation (PD):** 300W (at 25°C)
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 0.036Ω (max) at VGS = 10V
- **Total Gate Charge (Qg):** 110nC (typical)
- **Input Capacitance (Ciss):** 4500pF (typical)
- **Output Capacitance (Coss):** 900pF (typical)
- **Reverse Transfer Capacitance (Crss):** 130pF (typical)
- **Turn-On Delay Time (td(on)):** 18ns (typical)
- **Rise Time (tr):** 60ns (typical)
- **Turn-Off Delay Time (td(off)):** 80ns (typical)
- **Fall Time (tf):** 30ns (typical)
- **Operating Junction Temperature (TJ):** -55°C to +175°C
- **Package:** TO-220AB
### **Description:**
The IRFB52N15DPBF is a high-performance N-channel power MOSFET designed for high-current, high-voltage applications. It features low on-resistance and fast switching characteristics, making it suitable for power supplies, motor control, and DC-DC converters.
### **Features:**
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching:** Optimized for high-frequency applications.
- **High Current Handling:** Supports up to 52A continuous drain current.
- **Avalanche Energy Specified:** Enhances ruggedness in inductive load applications.
- **Improved dv/dt Capability:** Reduces parasitic turn-on effects.
- **Fully Characterized for Linear Mode Operation:** Ensures reliability in linear applications.
This information is sourced from the official Infineon/IR datasheet for the IRFB52N15DPBF.
