150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package **Manufacturer:** International Rectifier (IR)
**Part Number:** IRFB52N15D
**Specifications:**
- **Transistor Type:** N-Channel MOSFET
- **Drain-Source Voltage (VDSS):** 150V
- **Continuous Drain Current (ID):** 52A
- **Pulsed Drain Current (IDM):** 208A
- **Power Dissipation (PD):** 300W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 0.028Ω (max) at VGS = 10V
- **Total Gate Charge (Qg):** 110nC (typical)
- **Input Capacitance (Ciss):** 4400pF (typical)
- **Output Capacitance (Coss):** 900pF (typical)
- **Reverse Transfer Capacitance (Crss):** 150pF (typical)
- **Turn-On Delay Time (td(on)):** 18ns (typical)
- **Rise Time (tr):** 50ns (typical)
- **Turn-Off Delay Time (td(off)):** 60ns (typical)
- **Fall Time (tf):** 30ns (typical)
- **Operating Junction Temperature (TJ):** -55°C to +175°C
- **Package:** TO-220AB
**Descriptions and Features:**
- High current capability (52A continuous)
- Low on-resistance for reduced conduction losses
- Fast switching performance
- High power dissipation capability (300W)
- Robust and reliable design for power applications
- Suitable for switching power supplies, motor control, and other high-power applications
- Avalanche energy specified for ruggedness in inductive load switching
- Lead-free and RoHS compliant
(Note: Always refer to the official datasheet for precise and updated specifications.)
