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IRFB4212PBF from IR,International Rectifier

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15.625ms

IRFB4212PBF

Manufacturer: IR

100V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRFB4212PBF IR 12000 In Stock

Description and Introduction

100V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package The IRFB4212PBF is a Power MOSFET manufactured by International Rectifier (IR). Below are the specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:**  
International Rectifier (IR)  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 200V  
- **Continuous Drain Current (ID):** 71A (at 25°C)  
- **Pulsed Drain Current (IDM):** 280A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 300W (at 25°C)  
- **On-Resistance (RDS(on)):** 14mΩ (at VGS = 10V, ID = 36A)  
- **Gate Charge (Qg):** 120nC (typical)  
- **Input Capacitance (Ciss):** 4500pF  
- **Output Capacitance (Coss):** 1200pF  
- **Reverse Transfer Capacitance (Crss):** 250pF  
- **Turn-On Delay Time (td(on)):** 15ns  
- **Rise Time (tr):** 50ns  
- **Turn-Off Delay Time (td(off)):** 60ns  
- **Fall Time (tf):** 30ns  
- **Package:** TO-220AB  

### **Description:**  
The IRFB4212PBF is a high-performance N-Channel MOSFET designed for power switching applications. It features low on-resistance, fast switching speeds, and high current capability, making it suitable for motor drives, power supplies, and DC-DC converters.  

### **Features:**  
- **Low RDS(on)** for reduced conduction losses  
- **Fast switching speed** for improved efficiency  
- **High current handling** capability  
- **Avalanche energy rated** for ruggedness  
- **TO-220 package** for easy mounting and heat dissipation  
- **Pb-Free and RoHS compliant**  

This information is based on the manufacturer's datasheet and specifications.

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