200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRFB38N20D is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** International Rectifier (IR)
- **Type:** N-Channel Power MOSFET
- **Drain-Source Voltage (VDS):** 200V
- **Continuous Drain Current (ID):** 38A
- **Pulsed Drain Current (IDM):** 152A
- **Power Dissipation (PD):** 230W
- **Gate-Source Voltage (VGS):** ±20V
- **RDS(ON) (Max) @ VGS = 10V:** 0.085Ω
- **RDS(ON) (Max) @ VGS = 4.5V:** 0.115Ω
- **Threshold Voltage (VGS(th)):** 2-4V
- **Input Capacitance (Ciss):** 2900pF
- **Output Capacitance (Coss):** 580pF
- **Reverse Transfer Capacitance (Crss):** 110pF
- **Turn-On Delay Time (td(on)):** 16ns
- **Rise Time (tr):** 56ns
- **Turn-Off Delay Time (td(off)):** 60ns
- **Fall Time (tf):** 30ns
- **Operating Temperature Range:** -55°C to +175°C
- **Package:** TO-220AB
### **Description:**
The IRFB38N20D is a high-performance N-channel MOSFET designed for power switching applications. It offers low on-state resistance (RDS(ON)) and fast switching characteristics, making it suitable for high-efficiency power conversion circuits.
### **Features:**
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching Speed:** Enhances performance in high-frequency applications.
- **High Current Handling Capability:** Supports high-power applications.
- **Avalanche Energy Specified:** Ensures ruggedness in inductive load conditions.
- **Improved dv/dt Capability:** Enhances reliability in high-voltage switching.
- **TO-220 Package:** Provides mechanical durability and efficient heat dissipation.
This information is based solely on the manufacturer's datasheet and technical documentation.
