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IRFB33N15D from IR,International Rectifier

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IRFB33N15D

Manufacturer: IR

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRFB33N15D IR 4150 In Stock

Description and Introduction

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRFB33N15D is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from the datasheet:  

### **Manufacturer:** International Rectifier (IR)  
### **Part Number:** IRFB33N15D  
### **Type:** N-Channel Power MOSFET  
### **Voltage Ratings:**  
- **Drain-to-Source Voltage (VDSS):** 150V  
- **Gate-to-Source Voltage (VGS):** ±20V  

### **Current Ratings:**  
- **Continuous Drain Current (ID @ 25°C):** 33A  
- **Pulsed Drain Current (IDM):** 132A  

### **On-Resistance:**  
- **RDS(on) (max) @ VGS = 10V:** 0.055Ω  
- **RDS(on) (max) @ VGS = 4.5V:** 0.075Ω  

### **Power Dissipation:**  
- **Maximum Power Dissipation (PD @ 25°C):** 150W  

### **Switching Characteristics:**  
- **Total Gate Charge (Qg @ VDS = 100V, ID = 33A):** 60nC  
- **Input Capacitance (Ciss):** 1800pF  
- **Output Capacitance (Coss):** 300pF  
- **Reverse Transfer Capacitance (Crss):** 60pF  

### **Package:** TO-220AB (Through-Hole)  

### **Features:**  
- **Advanced Process Technology:** Optimized for high efficiency and fast switching.  
- **Low Gate Charge:** Enables high-frequency operation.  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Avalanche Energy Specified:** Ensures ruggedness in harsh conditions.  
- **Fully Characterized for Linear Mode Operation:** Suitable for a wide range of applications.  

### **Applications:**  
- Switching power supplies  
- Motor control  
- DC-DC converters  
- High-efficiency power management  

This information is sourced from the official IR datasheet for the IRFB33N15D.

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