60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package **Manufacturer:** International Rectifier (IR)
**Part Number:** IRFB3006PBF
**Specifications:**
- **Transistor Type:** N-Channel Power MOSFET
- **Drain-Source Voltage (VDSS):** 60V
- **Continuous Drain Current (ID):** 160A at 25°C
- **Pulsed Drain Current (IDM):** 640A
- **Power Dissipation (PD):** 300W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 3.6mΩ at VGS = 10V
- **Total Gate Charge (Qg):** 210nC
- **Input Capacitance (Ciss):** 7400pF
- **Output Capacitance (Coss):** 1400pF
- **Reverse Transfer Capacitance (Crss):** 190pF
- **Turn-On Delay Time (td(on)):** 18ns
- **Rise Time (tr):** 60ns
- **Turn-Off Delay Time (td(off)):** 60ns
- **Fall Time (tf):** 30ns
- **Operating Temperature Range:** -55°C to +175°C
- **Package:** TO-220AB
**Descriptions:**
The IRFB3006PBF is a high-performance N-Channel Power MOSFET designed for low-voltage, high-current applications. It features low on-resistance and fast switching characteristics, making it suitable for power management in motor control, DC-DC converters, and other high-efficiency applications.
**Features:**
- Low RDS(on) for reduced conduction losses
- High current handling capability
- Fast switching speed
- Robust and reliable TO-220 package
- Suitable for high-power applications
- Optimized for synchronous rectification in power supplies
(Note: Ensure to verify datasheet for the latest specifications.)
