600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package **Manufacturer:** VISHAY
**Part Number:** IRFB17N60K
**Specifications:**
- **Transistor Type:** N-Channel MOSFET
- **Drain-Source Voltage (VDSS):** 600V
- **Continuous Drain Current (ID):** 17A
- **Pulsed Drain Current (IDM):** 68A
- **Power Dissipation (PD):** 230W
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 0.25Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 4V (min)
- **Input Capacitance (Ciss):** 1800pF (typ)
- **Output Capacitance (Coss):** 320pF (typ)
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)
- **Turn-On Delay Time (td(on)):** 10ns (typ)
- **Turn-Off Delay Time (td(off)):** 45ns (typ)
- **Operating Temperature Range:** -55°C to +150°C
- **Package:** TO-220AB
**Description:**
The IRFB17N60K is a high-voltage N-Channel MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching speeds, making it suitable for power supplies, motor control, and inverters.
**Features:**
- Low gate charge
- High dv/dt capability
- Avalanche energy specified
- Improved switching performance
- Lead-free and RoHS compliant
- 100% tested for RDS(on)
