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IRF9531 from HARINRMO

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IRF9531

Manufacturer: HARINRMO

TRANSISTORS

Partnumber Manufacturer Quantity Availability
IRF9531 HARINRMO 200 In Stock

Description and Introduction

TRANSISTORS The IRF9531 is a P-channel power MOSFET manufactured by HARINRMO. Here are its specifications, descriptions, and features based on Ic-phoenix technical data files:

### **Specifications:**  
- **Drain-Source Voltage (VDS):** -100V  
- **Continuous Drain Current (ID):** -12A  
- **Pulsed Drain Current (IDM):** -48A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 75W  
- **On-Resistance (RDS(on)):** 0.3Ω (max) at VGS = -10V  
- **Threshold Voltage (VGS(th)):** -2V to -4V  

### **Descriptions:**  
- The IRF9531 is a high-voltage P-channel MOSFET designed for power switching applications.  
- It is suitable for use in DC-DC converters, motor control, and power management circuits.  
- The device features a low on-resistance and fast switching characteristics.  

### **Features:**  
- **Advanced HEXFET® technology** for high efficiency.  
- **Avalanche ruggedness** for improved reliability.  
- **Low gate charge** for fast switching.  
- **Fully characterized for linear operation.**  
- **Pb-free and RoHS compliant.**  

For detailed electrical characteristics and application notes, refer to the official datasheet.

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