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IRF9362TRPBF from IR,International Rectifier

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15.625ms

IRF9362TRPBF

Manufacturer: IR

-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF9362TRPBF IR 10000 In Stock

Description and Introduction

-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package The IRF9362TRPBF is a Power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Part Number:**  
IRF9362TRPBF  

### **Type:**  
P-Channel Power MOSFET  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** -30V  
- **Continuous Drain Current (ID):** -23A  
- **Pulsed Drain Current (IDM):** -92A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 45W  
- **On-Resistance (RDS(on)):**  
  - 12mΩ (at VGS = -10V)  
  - 14mΩ (at VGS = -4.5V)  
- **Threshold Voltage (VGS(th)):** -2V to -4V  

### **Features:**  
- Advanced HEXFET® technology  
- Low gate charge  
- High current handling capability  
- Fast switching performance  
- Avalanche energy specified  
- Lead-free and RoHS compliant  

### **Package:**  
TO-252 (DPAK)  

This MOSFET is designed for power management applications, including DC-DC converters, motor control, and battery management systems.

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