20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package **Manufacturer:** IR (International Rectifier)
**Part Number:** IRF8910TRPBF
### **Specifications:**
- **Transistor Type:** N-Channel MOSFET
- **Drain-Source Voltage (VDSS):** 100V
- **Continuous Drain Current (ID):** 23A
- **Pulsed Drain Current (IDM):** 92A
- **Power Dissipation (PD):** 200W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 0.023Ω (at VGS = 10V)
- **Threshold Voltage (VGS(th)):** 2V (min) – 4V (max)
- **Input Capacitance (Ciss):** 3600pF
- **Output Capacitance (Coss):** 900pF
- **Reverse Transfer Capacitance (Crss):** 150pF
- **Turn-On Delay Time (td(on)):** 12ns
- **Turn-Off Delay Time (td(off)):** 44ns
- **Rise Time (tr):** 30ns
- **Fall Time (tf):** 20ns
- **Operating Temperature Range:** -55°C to +175°C
- **Package:** TO-252 (DPAK)
### **Descriptions and Features:**
- **Technology:** Advanced HEXFET® Power MOSFET
- **Application:** Designed for high-efficiency switching applications
- **Low On-Resistance:** Minimizes conduction losses
- **Fast Switching Speed:** Enhances performance in high-frequency circuits
- **Avalanche Energy Rated:** Ensures ruggedness in harsh conditions
- **Lead-Free & RoHS Compliant:** Environmentally friendly
- **Optimized Gate Charge:** Improves switching efficiency
- **Low Thermal Resistance:** Enhances power dissipation
This information is based solely on the manufacturer's datasheet for the IRF8910TRPBF.
