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IRF8714GTRPBF from IR,International Rectifier

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IRF8714GTRPBF

Manufacturer: IR

Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF8714GTRPBF IR 5000 In Stock

Description and Introduction

Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package The IRF8714GTRPBF is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features based on Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Technology:** N-Channel HEXFET Power MOSFET  
- **Drain-Source Voltage (VDSS):** 40V  
- **Continuous Drain Current (ID):** 62A (at 25°C)  
- **Pulsed Drain Current (IDM):** 250A  
- **RDS(on) (Max):** 4.5mΩ (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-252 (DPAK)  

### **Descriptions & Features:**  
- Optimized for high-current, low-voltage applications.  
- Low on-state resistance (RDS(on)) for improved efficiency.  
- Fast switching performance.  
- Avalanche energy specified for ruggedness.  
- Lead-free and RoHS compliant.  
- Suitable for power management in DC-DC converters, motor control, and other switching applications.  

This information is strictly factual from Ic-phoenix technical data files.

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