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IRF840STRR from IR,International Rectifier

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IRF840STRR

Manufacturer: IR

500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF840STRR IR 1 In Stock

Description and Introduction

500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF840STRR is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Manufacturer:** Infineon Technologies  
### **Part Number:** IRF840STRR  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 500V  
- **Continuous Drain Current (ID):** 8A (at 25°C)  
- **Pulsed Drain Current (IDM):** 32A  
- **Power Dissipation (PD):** 125W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.85Ω (max at VGS = 10V, ID = 4.2A)  
- **Input Capacitance (Ciss):** 1100pF (typical)  
- **Output Capacitance (Coss):** 200pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 100pF (typical)  
- **Turn-On Delay Time (td(on)):** 10ns (typical)  
- **Rise Time (tr):** 30ns (typical)  
- **Turn-Off Delay Time (td(off)):** 55ns (typical)  
- **Fall Time (tf):** 20ns (typical)  

### **Description:**  
The IRF840STRR is an N-channel power MOSFET designed for high-speed switching applications. It offers low on-resistance and fast switching performance, making it suitable for power supplies, motor control, and other high-voltage applications.  

### **Features:**  
- **High Voltage Capability:** 500V breakdown voltage  
- **Low Gate Charge:** Improves switching efficiency  
- **Fast Switching Speed:** Optimized for high-frequency applications  
- **Avalanche Energy Specified:** Enhanced ruggedness  
- **TO-252 (DPAK) Package:** Surface-mount design for compact PCB layouts  
- **Lead-Free & RoHS Compliant:** Environmentally friendly  

This information is strictly based on the manufacturer's datasheet and technical documentation.

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