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IRF7901D1TR from IRF,International Rectifier

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IRF7901D1TR

Manufacturer: IRF, IOR, IR

30V FETKY

Partnumber Manufacturer Quantity Availability
IRF7901D1TR IRF, IOR, IR 14454 In Stock

Description and Introduction

30V FETKY The IRF7901D1TR is a Power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 42A (at 25°C)  
- **Pulsed Drain Current (IDM):** 170A  
- **RDS(on) (Max):** 4.5mΩ (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 79W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** D2PAK (TO-263)  

### **Descriptions:**  
- N-channel Power MOSFET designed for high-efficiency power switching applications.  
- Optimized for low on-state resistance (RDS(on)) and high current handling.  
- Suitable for synchronous rectification in DC-DC converters, motor control, and power management.  

### **Features:**  
- Low gate charge for fast switching.  
- Low RDS(on) for reduced conduction losses.  
- Avalanche energy specified for ruggedness.  
- Lead-free and RoHS compliant.  

This information is based on the manufacturer's datasheet. For detailed performance characteristics, refer to the official documentation.

Application Scenarios & Design Considerations

30V FETKY

Alternative Part Number

  • FDS8958A --: Dual N-channel MOSFET in SO-8 with comparable RDS(on) and voltage rating, suitable drop-in replacement for switching applications.
  • SI4936ADY --: Dual N-channel MOSFET in SO-8 with similar current and voltage ratings, widely available and electrically compatible.
  • NTMD4840NR2G --: Dual N-channel MOSFET in SO-8 offering comparable on-resistance and gate charge, usable as an alternative with minor layout checks.

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