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IRF7805QTRPBF from IR,International Rectifier

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IRF7805QTRPBF

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7805QTRPBF IR 37179 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package The IRF7805QTRPBF is a power MOSFET manufactured by Infineon Technologies. Here are its key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Description:**  
The IRF7805QTRPBF is a N-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance and fast switching performance, making it suitable for DC-DC converters, motor control, and power supply applications.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 55V  
- **Continuous Drain Current (ID):** 12A  
- **Pulsed Drain Current (IDM):** 48A  
- **On-Resistance (RDS(on)):** 0.028Ω (max) at VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 3.1W  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Features:**  
- Low gate charge for fast switching  
- Low thermal resistance  
- Avalanche energy specified  
- Lead-free and RoHS compliant  
- Surface-mount (D2PAK) package  

### **Applications:**  
- DC-DC converters  
- Motor drives  
- Power management systems  
- Battery protection circuits  

This MOSFET is optimized for high-efficiency power conversion and robust performance in demanding environments.

Application Scenarios & Design Considerations

30V Single N-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package

Alternative Part Number

  • SI4436DY-T1-GE3 --: N-channel MOSFET in SO-8 with comparable RDS(on) and voltage rating, widely available and pin-compatible for switching applications.
  • FDS6680A --: Logic-level N-channel MOSFET in SO-8 with similar current and RDS(on) characteristics, suitable drop-in replacement for low-side switching.
  • AO4406A --: N-channel MOSFET in SO-8 offering comparable voltage and current ratings with low gate charge, a cost-effective alternative.

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