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IRF7757TR from IR,International Rectifier

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IRF7757TR

Manufacturer: IR

20V Dual N-Channel HEXFET Power MOSFET in a TSSOP-8 package

Partnumber Manufacturer Quantity Availability
IRF7757TR IR 3770 In Stock

Description and Introduction

20V Dual N-Channel HEXFET Power MOSFET in a TSSOP-8 package The IRF7757TR is a Power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Technology:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 40V  
- **Continuous Drain Current (ID):** 130A  
- **Pulsed Drain Current (IDM):** 520A  
- **RDS(on) (Max):** 1.3mΩ @ VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 330W  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-220AB  

### **Features:**  
- Low on-state resistance (RDS(on)) for reduced conduction losses.  
- High current handling capability.  
- Fast switching performance.  
- Avalanche energy specified for ruggedness.  
- Lead-free and RoHS compliant.  

### **Applications:**  
- DC-DC converters  
- Motor control  
- Power management in automotive and industrial systems  
- Synchronous rectification  

This information is based on Infineon's datasheet for the IRF7757TR.

Application Scenarios & Design Considerations

20V Dual N-Channel HEXFET Power MOSFET in a TSSOP-8 package

Alternative Part Number

  • SI4436DY-T1-GE3 --: Dual N-channel MOSFET in SO-8 with comparable RDS(on) and voltage rating, suitable drop-in replacement for the IRF7757TR in most switching applications.
  • FDS8958A --: Dual N-channel MOSFET in SO-8 with similar current and voltage ratings, widely available and electrically compatible with the original part.
  • AO4812 --: Dual N-channel MOSFET in SO-8 offering comparable on-resistance and gate charge, a cost-effective alternative for the IRF7757TR.

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