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IRF7607

Manufacturer: IOR, IR, IRF

20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Partnumber Manufacturer Quantity Availability
IRF7607 IOR, IR, IRF 20975 In Stock

Description and Introduction

20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package The IRF7607 is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 12A  
- **Pulsed Drain Current (IDM):** 48A  
- **Power Dissipation (PD):** 45W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.015Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1.0V (min) to 2.0V (max)  
- **Input Capacitance (Ciss):** 1500pF (typ)  
- **Output Capacitance (Coss):** 500pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 100pF (typ)  
- **Turn-On Delay Time (td(on)):** 10ns (typ)  
- **Turn-Off Delay Time (td(off)):** 45ns (typ)  
- **Package:** TO-220AB  

### **Descriptions & Features:**  
- Designed for high-efficiency power switching applications.  
- Low on-resistance for reduced conduction losses.  
- Fast switching performance.  
- Avalanche energy specified for ruggedness.  
- Suitable for DC-DC converters, motor control, and power management applications.  
- Lead-free and RoHS compliant.  

These details are based solely on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package

Alternative Part Number

  • SI3456DV --: N-channel MOSFET in a similar small package with comparable voltage and current ratings, suitable for switching applications.
  • FDC6420C --: Dual N-channel MOSFET in a compact package offering similar on-resistance and current handling for load switching.
  • NTMS4177P --: P-channel MOSFET with comparable voltage and current ratings, usable where polarity and drive conditions match.
  • NTMS4404N --: N-channel power MOSFET with comparable RDS(on) and voltage rating, a viable alternative for switching applications.
  • SI3442DV --: N-channel MOSFET in a small package with comparable voltage and current ratings, suitable for similar low-power switching applications.
  • FDS6680A --: Logic-level N-channel MOSFET with similar RDS(on) and current capability, suitable drop-in replacement in low-voltage power switching circuits.
  • AO3400 --: Low-threshold N-channel MOSFET in SOT-23, good match for low-power switching where the original is used, with broad availability and low cost.
  • AO4406 --: N-channel MOSFET with similar package and electrical characteristics, offering a cost-effective cross-reference option.

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