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IRF7530 from IOR,International Rectifier

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IRF7530

Manufacturer: IOR, IR, IRF

20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package
Partnumber Manufacturer Quantity Availability
IRF7530 IOR, IR, IRF 42809 In Stock

Description and Introduction

20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package The IRF7530 is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** International Rectifier (IR)  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 36A (at 25°C)  
- **Pulsed Drain Current (IDM):** 144A  
- **Power Dissipation (PD):** 125W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.008Ω (typical at VGS = 10V)  
- **Threshold Voltage (VGS(th)):** 2V (typical)  
- **Input Capacitance (Ciss):** 2200pF (typical)  
- **Output Capacitance (Coss):** 600pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 150pF (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-220AB  

### **Descriptions and Features:**  
- The IRF7530 is a high-current, low-on-resistance N-Channel MOSFET designed for power switching applications.  
- It features a low gate charge and fast switching performance, making it suitable for high-efficiency DC-DC converters and motor control circuits.  
- The device is optimized for low-voltage applications (up to 30V) and provides high power handling capability.  
- The TO-220AB package ensures good thermal performance and ease of mounting.  
- It is commonly used in power supplies, motor drives, and automotive applications.  

This information is based solely on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package

Alternative Part Number

  • SI7108DN-T1-GE3 --: N-channel MOSFET in a similar low-voltage power package with comparable RDS(on) and current rating, suitable as a drop-in functional replacement.
  • FDS6690A --: Logic-level N-channel MOSFET with similar voltage and current specifications, widely available and commonly used in the same power-switching applications.
  • AO4406A --: Low-voltage N-channel MOSFET offering comparable on-resistance and current handling in a similar SO-8 style package, a cost-effective alternative.
  • SI7308DP --: Dual N-channel MOSFET in a similar package with comparable voltage and current ratings, suitable for the same load-switching applications.
  • FDS6898A --: Dual N-channel MOSFET with low on-resistance and similar electrical characteristics, a common drop-in alternative for power management circuits.
  • AO4812 --: Dual N-channel MOSFET offering comparable RDS(on) and current handling, widely used as a cost-effective substitute in similar designs.
  • SI4404DY-T1-GE3 --: N-channel MOSFET in SO-8 with comparable voltage and on-resistance ratings, widely available and pin-compatible for switching applications.
  • AO4406 --: Low-voltage N-channel MOSFET offering comparable on-resistance and current handling, widely available and cost-effective substitute.

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