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IRF7477 from IOR,International Rectifier

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IRF7477

Manufacturer: IOR, IR

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7477 IOR, IR 1188 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package The IRF7477 is a Power MOSFET manufactured by Infineon Technologies. Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications (IOR - Input/Output Related):**  
- **Drain-Source Voltage (VDS):** 40V  
- **Continuous Drain Current (ID):** 195A  
- **Pulsed Drain Current (IDM):** 390A  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 1.7mΩ (max) at VGS = 10V  
- **Power Dissipation (PD):** 330W  

### **Descriptions:**  
- The IRF7477 is a high-performance N-channel MOSFET designed for power management applications.  
- It features low on-resistance and high current handling capability, making it suitable for high-efficiency switching applications.  

### **Features:**  
- Low RDS(on) for reduced conduction losses  
- High current capability  
- Fast switching performance  
- Robust and reliable construction  
- Optimized for synchronous buck converters and motor control applications  

This information is based solely on the provided knowledge base. No additional guidance or suggestions are included.

Application Scenarios & Design Considerations

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Alternative Part Number

  • SI4488DY --: N-channel MOSFET in SO-8 with comparable RDS(on) and voltage rating, suitable drop-in replacement for switching applications.
  • FDS6690A --: Logic-level N-channel MOSFET in SO-8 with similar current and voltage ratings, widely available alternative.
  • AO4406 --: N-channel MOSFET in SO-8 with comparable on-resistance and gate charge, cost-effective substitute.
  • SI4486EY --: N-channel MOSFET with comparable voltage and current ratings, suitable drop-in replacement in many switching applications.
  • FDS6680A --: Similar RDS(on) and current capability in SO-8 package, widely used as an alternative in power switching circuits.
  • NTMS4816N --: N-channel MOSFET with matching package and electrical characteristics, good availability and cost-effective substitute.

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