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IRF7477 from IOR,International Rectifier

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IRF7477

Manufacturer: IOR

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7477 IOR 1020 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package The IRF7477 is a Power MOSFET manufactured by Infineon Technologies. Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications (IOR - Input/Output Related):**  
- **Drain-Source Voltage (VDS):** 40V  
- **Continuous Drain Current (ID):** 195A  
- **Pulsed Drain Current (IDM):** 390A  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 1.7mΩ (max) at VGS = 10V  
- **Power Dissipation (PD):** 330W  

### **Descriptions:**  
- The IRF7477 is a high-performance N-channel MOSFET designed for power management applications.  
- It features low on-resistance and high current handling capability, making it suitable for high-efficiency switching applications.  

### **Features:**  
- Low RDS(on) for reduced conduction losses  
- High current capability  
- Fast switching performance  
- Robust and reliable construction  
- Optimized for synchronous buck converters and motor control applications  

This information is based solely on the provided knowledge base. No additional guidance or suggestions are included.

Application Scenarios & Design Considerations

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Partnumber Manufacturer Quantity Availability
IRF7477 IR 168 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package The IRF7477 is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
International Rectifier (IR)  

### **Part Number:**  
IRF7477  

### **Description:**  
The IRF7477 is a high-performance N-channel power MOSFET designed for efficient power management in various applications.  

### **Key Features:**  
- **Voltage Rating:** 30V  
- **Current Rating:** 100A (continuous drain current)  
- **Low On-Resistance (RDS(on)):** 1.7 mΩ (typical at VGS = 10V)  
- **Gate Charge (Qg):** 110 nC (typical)  
- **Fast Switching Speed**  
- **Avalanche Energy Rated**  
- **Logic-Level Gate Drive (compatible with 4.5V drive)**  
- **Low Thermal Resistance**  
- **TO-220 Package**  

### **Applications:**  
- DC-DC converters  
- Motor control  
- Power supplies  
- Battery management systems  
- Synchronous rectification  

This information is based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

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