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IRF7471TRPBF from IR,International Rectifier

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IRF7471TRPBF

Manufacturer: IR

40V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7471TRPBF IR 568 In Stock

Description and Introduction

40V Single N-Channel HEXFET Power MOSFET in a SO-8 package The IRF7471TRPBF is a Power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Part Number:**  
IRF7471TRPBF  

### **Description:**  
- N-Channel Power MOSFET  
- Designed for high-efficiency power management applications  
- Suitable for switching and amplification in various circuits  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 40V  
- **Continuous Drain Current (ID):** 195A  
- **Pulsed Drain Current (IDM):** 390A  
- **Power Dissipation (PD):** 330W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 1.7mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2.1V (min), 4V (max)  
- **Input Capacitance (Ciss):** 5400pF  
- **Output Capacitance (Coss):** 1800pF  
- **Reverse Transfer Capacitance (Crss):** 220pF  

### **Features:**  
- Low on-resistance for reduced conduction losses  
- Fast switching performance  
- High current handling capability  
- Robust and reliable for power applications  
- Lead-free and RoHS compliant  

### **Package:**  
- **Type:** PQFN (Power Quad Flat No-Lead)  
- **Pins:** 5  

This MOSFET is commonly used in power supplies, motor control, DC-DC converters, and other high-current applications.

Application Scenarios & Design Considerations

40V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Alternative Part Number

  • SI4436DY-T1-GE3 --: N-channel MOSFET in SO-8 with comparable RDS(on) and voltage rating, widely available and pin-compatible replacement.
  • FDS6690A --: Similar N-channel logic-level MOSFET in SO-8 package with matching current and voltage characteristics.
  • AO4406A --: Cost-effective N-channel MOSFET in SO-8 with comparable on-resistance and ratings, suitable drop-in alternative.

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