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IRF7466TRPBF from IRF,International Rectifier

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IRF7466TRPBF

Manufacturer: IRF, IR

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7466TRPBF IRF, IR 12431 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package The IRF7466TRPBF is a Power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features based on Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Description:**  
The IRF7466TRPBF is a dual N-channel MOSFET in a PowerPAIR® SO-8 package, designed for high-efficiency power management applications.  

### **Key Features:**  
- **Dual N-Channel MOSFET:** Two independent N-channel MOSFETs in a single package.  
- **Low On-Resistance (RDS(on)):**  
  - **VGS = 4.5V:** 9.5mΩ (max)  
  - **VGS = 10V:** 6.5mΩ (max)  
- **High Current Handling:**  
  - **Continuous Drain Current (ID):** 12A per MOSFET (at 25°C)  
  - **Pulsed Drain Current (IDM):** 48A per MOSFET  
- **Voltage Ratings:**  
  - **Drain-to-Source Voltage (VDS):** 30V  
  - **Gate-to-Source Voltage (VGS):** ±20V  
- **Low Gate Charge (Qg):** 13nC (typical)  
- **Fast Switching Performance:** Optimized for high-frequency applications.  
- **PowerPAIR® SO-8 Package:** Compact footprint with improved thermal performance.  
- **AEC-Q101 Qualified:** Suitable for automotive applications.  

### **Applications:**  
- DC-DC converters  
- Motor control  
- Power management in computing and telecom systems  
- Automotive power systems  

### **Package:**  
- **Type:** SO-8 (PowerPAIR®)  
- **Termination:** Lead (Pb)-free, RoHS compliant  

This information is strictly factual and derived from the manufacturer's datasheet.

Application Scenarios & Design Considerations

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Alternative Part Number

  • SI4459BDY-T1-GE3 --: P-channel MOSFET in SO-8 with comparable voltage and on-resistance ratings, suitable drop-in replacement for switching applications.
  • FDS4935A --: Dual P-channel MOSFET in SO-8 offering similar RDS(on) and current handling, commonly used as an alternative in load-switch circuits.
  • DMP3010LK3Q-13 --: P-channel MOSFET with low on-resistance and SO-8 compatible footprint, providing a functional substitute for power management designs.
  • SI4436DY-T1-GE3 --: N-channel MOSFET in SO-8 with comparable RDS(on) and voltage rating, suitable drop-in replacement for switching applications.
  • FDS6680A --: Logic-level N-channel MOSFET in SO-8 with similar current and voltage ratings, widely used as an alternative in power switching circuits.
  • AO4406A --: N-channel MOSFET in SO-8 offering comparable on-resistance and gate charge, a cost-effective alternative for similar load-switch designs.

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