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IRF7464TRPBF from IOR,International Rectifier

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IRF7464TRPBF

Manufacturer: IOR, IR

200V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Partnumber Manufacturer Quantity Availability
IRF7464TRPBF IOR, IR 18678 In Stock

Description and Introduction

200V Single N-Channel HEXFET Power MOSFET in a SO-8 package The IRF7464TRPBF is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Specifications:**  
- **Manufacturer:** Infineon Technologies  
- **Part Number:** IRF7464TRPBF  
- **Type:** N-Channel MOSFET  
- **Technology:** HEXFET® Power MOSFET  
- **Drain-Source Voltage (VDS):** 40V  
- **Continuous Drain Current (ID):** 195A @ 25°C  
- **Pulsed Drain Current (IDM):** 780A  
- **Power Dissipation (PD):** 330W @ 25°C  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 1.2mΩ @ VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2.1V (typical)  
- **Input Capacitance (Ciss):** 10400pF  
- **Output Capacitance (Coss):** 3800pF  
- **Reverse Transfer Capacitance (Crss):** 1200pF  
- **Operating Temperature Range:** -55°C to +175°C  
- **Package:** PQFN 5x6mm  

### **Descriptions & Features:**  
- **High-Performance MOSFET:** Designed for high-efficiency power switching applications.  
- **Low On-Resistance:** Minimizes conduction losses for improved efficiency.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **Robust Design:** Features Infineon’s advanced HEXFET® technology for reliability.  
- **Avalanche Energy Rated:** Ensures ruggedness in harsh conditions.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  
- **Applications:** Used in DC-DC converters, motor drives, power supplies, and battery management systems.  

This information is based solely on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

200V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Alternative Part Number

  • SI4459BDY-T1-GE3 --: P-channel MOSFET in SO-8 with comparable voltage and on-resistance ratings, suitable drop-in replacement for load-switch and power-management designs.
  • FDS4935BZ --: Dual P-channel MOSFET in SO-8 offering similar RDS(on) and current handling, commonly used where the IRF7464 is specified.
  • NTMS4403NR2G --: P-channel MOSFET in SO-8 with comparable breakdown voltage and current rating, a practical alternate for switching applications.
  • SI4436DY-T1-GE3 --: N-channel MOSFET in SO-8 with comparable voltage and on-resistance ratings, widely available and pin-compatible for switching applications.
  • FDS6680A --: Logic-level N-channel MOSFET in SO-8 offering similar RDS(on) and current handling, suitable drop-in replacement in most circuits.
  • AO4406A --: SO-8 N-channel MOSFET with comparable breakdown voltage and low gate charge, a cost-effective alternative for power switching.

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