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IRF7453TRPBF from IRF,International Rectifier

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IRF7453TRPBF

Manufacturer: IRF, IR

250V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7453TRPBF IRF, IR 27435 In Stock

Description and Introduction

250V Single N-Channel HEXFET Power MOSFET in a SO-8 package The IRF7453TRPBF is a Power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Part Number:**  
IRF7453TRPBF  

### **Description:**  
- N-Channel Power MOSFET  
- Designed for high-efficiency power management applications  
- Suitable for switching and amplification in power circuits  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 100A  
- **Pulsed Drain Current (IDM):** 400A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **RDS(on) (Max) at VGS = 10V:** 2.3mΩ  
- **RDS(on) (Max) at VGS = 4.5V:** 3.0mΩ  
- **Threshold Voltage (VGS(th)):** 1.0V to 2.5V  
- **Total Gate Charge (Qg):** 120nC (Typical)  
- **Input Capacitance (Ciss):** 5200pF (Typical)  
- **Output Capacitance (Coss):** 1800pF (Typical)  
- **Reverse Transfer Capacitance (Crss):** 350pF (Typical)  
- **Operating Junction Temperature Range:** -55°C to +175°C  

### **Package:**  
- **Type:** PQFN 5x6mm  
- **Termination:** Surface Mount (SMD)  
- **Lead-Free & RoHS Compliant**  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced conduction losses  
- High current handling capability  
- Fast switching performance  
- Optimized for synchronous buck converters and motor control applications  
- Enhanced thermal performance due to advanced packaging  

This MOSFET is commonly used in power supplies, DC-DC converters, motor drives, and other high-current switching applications.

Application Scenarios & Design Considerations

250V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Alternative Part Number

  • SI4459ADY-T1-GE3 --: P-channel MOSFET in SO-8 with comparable voltage and on-resistance ratings, suitable drop-in replacement for switching and load-switch applications.
  • FDS4935A --: Dual P-channel MOSFET in SO-8 offering similar RDS(on) and current handling, commonly used as an alternative in power management circuits.
  • DMP3010LK3Q-13 --: P-channel MOSFET with low on-resistance and similar package/thermal characteristics, usable as a functional substitute where layout allows.
  • SI4450DY-T1-GE3 --: N-channel MOSFET in SO-8 with comparable voltage and on-resistance ratings, suitable drop-in replacement for switching applications.
  • FDS6680A --: Logic-level N-channel MOSFET in SO-8 with similar RDS(on) and current capability, widely available alternative.
  • AO4406A --: N-channel MOSFET in SO-8 with comparable specifications and good availability as a cost-effective substitute.

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