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IRF7452QTRPBF from IR,International Rectifier

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IRF7452QTRPBF

Manufacturer: IR, IOR

100V Single N-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7452QTRPBF IR, IOR 32713 In Stock

Description and Introduction

100V Single N-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package The IRF7452QTRPBF is a power MOSFET manufactured by Infineon Technologies. Below are the factual details about its specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Technology:** N-Channel MOSFET  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 15A  
- **RDS(ON) (Max):** 6.5mΩ @ VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W  
- **Operating Temperature Range:** -55°C to +175°C  
- **Package:** PQFN 5x6mm  

### **Descriptions:**  
- Designed for high-efficiency power management applications.  
- Low on-resistance (RDS(ON)) for reduced conduction losses.  
- Optimized for switching applications in DC-DC converters, motor control, and power supplies.  

### **Features:**  
- **Low Gate Charge:** Enhances switching performance.  
- **Fast Switching Speed:** Improves efficiency in high-frequency applications.  
- **Avalanche Energy Rated:** Ensures robustness in harsh conditions.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This information is sourced from Infineon's official datasheet for the IRF7452QTRPBF.

Application Scenarios & Design Considerations

100V Single N-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package

Alternative Part Number

  • SI4459ADY-T1-GE3 --: N-channel MOSFET in SO-8 with comparable RDS(on) and voltage rating, direct drop-in for switching applications.
  • FDS6690A --: Similar N-channel logic-level MOSFET in SO-8 package with matching current and voltage ratings.
  • AO4406A --: Cost-effective N-channel MOSFET in SO-8 with comparable on-resistance and gate charge characteristics.

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