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IRF7416PBF from IR,International Rectifier

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IRF7416PBF

Manufacturer: IR

HEXFET Power MOSFET

Partnumber Manufacturer Quantity Availability
IRF7416PBF IR 12000 In Stock

Description and Introduction

HEXFET Power MOSFET The IRF7416PBF is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features based on factual data:

### **Manufacturer:**  
Infineon Technologies  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 60V  
- **Continuous Drain Current (ID):** 13A  
- **Pulsed Drain Current (IDM):** 52A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 50W  
- **On-Resistance (RDS(on)):** 0.028Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 1300pF  
- **Output Capacitance (Coss):** 320pF  
- **Reverse Transfer Capacitance (Crss):** 80pF  
- **Operating Temperature Range:** -55°C to +175°C  

### **Description:**  
The IRF7416PBF is an N-channel power MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching performance, making it suitable for power management in DC-DC converters, motor control, and other high-current applications.  

### **Features:**  
- Low RDS(on) for reduced conduction losses  
- Fast switching speed  
- Improved dv/dt capability  
- Lead-free and RoHS compliant  
- TO-220AB package for easy mounting  

This information is sourced from Infineon's official datasheet for the IRF7416PBF.

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