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IRF7413Q from IR,International Rectifier

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IRF7413Q

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7413Q IR 2856 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package The IRF7413Q is a Power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Voltage Rating (VDSS):** 30V  
- **Current Rating (ID @ 25°C):** 50A  
- **RDS(on) (Max @ VGS = 10V):** 3.3mΩ  
- **Gate Threshold Voltage (VGS(th)):** 1V (Min), 2.35V (Typ), 3.5V (Max)  
- **Power Dissipation (PD @ 25°C):** 200W  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** PQFN 5x6mm  

### **Description:**  
The IRF7413Q is a high-performance N-channel MOSFET optimized for low-voltage, high-current applications. It features ultra-low on-resistance (RDS(on)) and fast switching characteristics, making it suitable for power management in DC-DC converters, motor drives, and synchronous rectification.  

### **Features:**  
- **Low RDS(on):** Minimizes conduction losses.  
- **High Current Capability:** Supports up to 50A continuous drain current.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **PQFN Package:** Enhances thermal performance and power density.  
- **Avalanche Rated:** Robust against transient voltage spikes.  

This information is based solely on the manufacturer’s datasheet and technical documentation.

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