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IRF7379QTRPBF from IR,International Rectifier

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IRF7379QTRPBF

Manufacturer: IR

30V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7379QTRPBF IR 819 In Stock

Description and Introduction

30V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package The IRF7379QTRPBF is a dual N-channel and P-channel HEXFET Power MOSFET manufactured by Infineon Technologies. Below are the specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Configuration:** Dual N-Channel and P-Channel  
- **Drain-Source Voltage (VDS):**  
  - N-Channel: 30V  
  - P-Channel: -30V  
- **Continuous Drain Current (ID):**  
  - N-Channel: 4.3A  
  - P-Channel: -3.7A  
- **RDS(on) (Max @ VGS):**  
  - N-Channel: 0.055Ω @ 10V  
  - P-Channel: 0.1Ω @ -10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2W  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** 8-Pin SOIC  

### **Descriptions and Features:**  
- Designed for high-efficiency power switching applications.  
- Low gate charge for fast switching performance.  
- Low RDS(on) for reduced conduction losses.  
- Avalanche ruggedness for improved reliability.  
- Optimized for synchronous buck converters and other power management applications.  
- Lead-free and RoHS compliant.  

This information is strictly based on the provided knowledge base.

Partnumber Manufacturer Quantity Availability
IRF7379QTRPBF IOR 40000 In Stock

Description and Introduction

30V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package The IRF7379QTRPBF is a dual N-channel and P-channel MOSFET manufactured by Infineon Technologies.  

### **Key Specifications:**  
- **Manufacturer:** Infineon Technologies  
- **Configuration:** Dual N-Channel and P-Channel MOSFET  
- **Drain-Source Voltage (VDS):**  
  - N-Channel: 30V  
  - P-Channel: -30V  
- **Continuous Drain Current (ID):**  
  - N-Channel: 4.3A  
  - P-Channel: -3.7A  
- **RDS(on) (Max @ VGS):**  
  - N-Channel: 50mΩ @ 10V  
  - P-Channel: 80mΩ @ -10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2W  
- **Package:** 8-Pin SOIC  

### **Features:**  
- **Dual MOSFET:** Combines N-Channel and P-Channel in one package.  
- **Low On-Resistance:** Enhances efficiency in switching applications.  
- **Fast Switching:** Suitable for high-speed switching circuits.  
- **Logic Level Compatible:** Can be driven by low-voltage control signals.  
- **AEC-Q101 Qualified:** Meets automotive industry standards.  

This MOSFET is commonly used in power management, DC-DC converters, motor control, and other switching applications.

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