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IRF6619TRPBF from IR,International Rectifier

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IRF6619TRPBF

Manufacturer: IR

DirectFET Power MOSFET
Partnumber Manufacturer Quantity Availability
IRF6619TRPBF IR 24000 In Stock

Description and Introduction

DirectFET Power MOSFET **Manufacturer:** IR (International Rectifier)  

**Part Number:** IRF6619TRPBF  

**Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 150V  
- **Continuous Drain Current (ID):** 28A (at 25°C)  
- **RDS(on) (Max):** 0.038Ω (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 79W (at 25°C)  
- **Operating Temperature Range:** -55°C to +175°C  
- **Package:** TO-220AB (Through-Hole)  

**Descriptions and Features:**  
- Designed for high-efficiency power switching applications.  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- Fast switching performance.  
- Avalanche energy specified for ruggedness in inductive load applications.  
- Lead-free and RoHS compliant.  

(Note: Always verify datasheet details for exact specifications.)

Application Scenarios & Design Considerations

DirectFET Power MOSFET

Alternative Part Number

  • CSD17501Q5A --: N-channel NexFET in a 5x6 QFN with comparable RDS(on) and voltage rating, a common drop-in replacement for IRF6619 in power switching applications.
  • BSC0902NSI --: OptiMOS N-channel MOSFET in SuperSO8 with similar on-resistance and current capability, suitable for synchronous buck and load switch designs.
  • NVMFS5C410NL --: Power N-channel MOSFET in SO-8FL with low RDS(on) and comparable ratings, offering a functional alternative for the IRF6619 footprint.

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