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IRF644PBF from IR,International Rectifier

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IRF644PBF

Manufacturer: IR

250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRF644PBF IR 12000 In Stock

Description and Introduction

250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRF644PBF is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Description:**  
The IRF644PBF is an N-channel power MOSFET designed for high-speed switching applications. It is part of the HEXFET® family, known for low on-resistance and high efficiency.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 250V  
- **Continuous Drain Current (ID):** 14A  
- **Pulsed Drain Current (IDM):** 56A  
- **Power Dissipation (PD):** 150W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.30Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 1000pF  
- **Output Capacitance (Coss):** 300pF  
- **Reverse Transfer Capacitance (Crss):** 50pF  
- **Turn-On Delay Time (td(on)):** 10ns  
- **Rise Time (tr):** 30ns  
- **Turn-Off Delay Time (td(off)):** 55ns  
- **Fall Time (tf):** 20ns  

### **Features:**  
- **Fast Switching Speed** – Optimized for high-frequency applications.  
- **Low On-Resistance** – Reduces conduction losses.  
- **Avalanche Energy Specified** – Enhances ruggedness in inductive load applications.  
- **TO-220 Package** – Provides efficient thermal dissipation.  
- **Fully Characterized Dynamic Parameters** – Ensures reliable performance in switching circuits.  

### **Applications:**  
- Switching power supplies  
- Motor control  
- DC-DC converters  
- High-frequency inverters  

This information is based solely on the manufacturer's datasheet and technical documentation.

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