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IRF640STRR from IR,International Rectifier

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IRF640STRR

Manufacturer: IR

200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF640STRR IR 800 In Stock

Description and Introduction

200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF640STRR is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 200V  
- **Continuous Drain Current (ID):** 18A  
- **Pulsed Drain Current (IDM):** 72A  
- **Power Dissipation (PD):** 125W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.15Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2-4V  
- **Input Capacitance (Ciss):** 1800pF (typ)  
- **Output Capacitance (Coss):** 500pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 150pF (typ)  
- **Turn-On Delay Time (td(on)):** 10ns (typ)  
- **Turn-Off Delay Time (td(off)):** 44ns (typ)  
- **Operating Temperature Range:** -55°C to +175°C  

### **Description:**  
The IRF640STRR is an N-channel power MOSFET designed for high-speed switching applications. It features low on-resistance and fast switching performance, making it suitable for power supplies, motor control, and other high-efficiency applications.  

### **Features:**  
- **High Voltage Capability (200V)**  
- **Low On-Resistance (0.15Ω max)**  
- **Fast Switching Speed**  
- **Avalanche Energy Specified**  
- **Improved dv/dt Capability**  
- **TO-263 (D2PAK) Package for Surface Mount Applications**  

This information is based solely on the provided knowledge base.

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