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IRF640NSTRLPBF from IR,International Rectifier

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IRF640NSTRLPBF

Manufacturer: IR

200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRF640NSTRLPBF IR 7200 In Stock

Description and Introduction

200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRF640NSTRLPBF is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
International Rectifier (IR)  

### **Part Number:**  
IRF640NSTRLPBF  

### **Description:**  
The IRF640NSTRLPBF is an N-channel power MOSFET designed for high-speed switching applications. It is part of IR's HEXFET® power MOSFET series, which provides efficient power handling and low on-resistance.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 200V  
- **Continuous Drain Current (ID):** 18A  
- **Pulsed Drain Current (IDM):** 72A  
- **Power Dissipation (PD):** 150W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.15Ω (max) @ VGS = 10V  
- **Input Capacitance (Ciss):** 1800pF (typical)  
- **Output Capacitance (Coss):** 300pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 100pF (typical)  
- **Turn-On Delay Time (td(on)):** 10ns (typical)  
- **Turn-Off Delay Time (td(off)):** 55ns (typical)  
- **Rise Time (tr):** 30ns (typical)  
- **Fall Time (tf):** 20ns (typical)  

### **Package:**  
TO-262 (D2PAK)  

### **Features:**  
- **Advanced HEXFET® Technology** for low conduction losses  
- **Fast switching speed** for high-efficiency applications  
- **Avalanche energy rated** for ruggedness  
- **Low gate charge** for improved drive efficiency  
- **Fully characterized for linear mode operation**  
- **Pb-free and RoHS compliant**  

This MOSFET is commonly used in power supplies, motor control, DC-DC converters, and other high-current switching applications.  

(Note: All data is based on the manufacturer's datasheet.)

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