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IRF640B from FAIRCHILD,Fairchild Semiconductor

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IRF640B

Manufacturer: FAIRCHILD

200V N-Channel MOSFET

Partnumber Manufacturer Quantity Availability
IRF640B FAIRCHILD 2010 In Stock

Description and Introduction

200V N-Channel MOSFET The IRF640B is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are its specifications, descriptions, and features based on available factual information:  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 200V  
- **Continuous Drain Current (ID):** 18A  
- **Pulsed Drain Current (IDM):** 72A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 125W  
- **On-Resistance (RDS(on)):** 0.18Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2-4V  
- **Input Capacitance (Ciss):** 1100pF (typ)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-220AB  

### **Description:**  
The IRF640B is an N-channel power MOSFET designed for high-speed switching applications. It is optimized for low on-resistance and high current handling, making it suitable for power supplies, motor control, and other high-efficiency switching circuits.  

### **Features:**  
- **High Voltage Capability:** 200V drain-source voltage rating.  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **Avalanche Energy Specified:** Enhances ruggedness in inductive load conditions.  
- **Improved dv/dt Capability:** Reduces spurious turn-on in high-speed switching.  
- **TO-220 Package:** Provides efficient thermal dissipation.  

This information is based on Fairchild Semiconductor's datasheet for the IRF640B. For detailed performance curves and application notes, refer to the official documentation.

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